| Product Name | Sodium Chloride (NaCl) |
| Crystal structure | Cubic |
| Growth method | Crystallization method |
| Lattice parameters | a=5.642Å |
| Melting point | 801℃ |
| Density | 2.16（g/cm3） |
| Mohs hardness | 2 |
| Wave band | 0.25~22.00 μm |
| Index of refraction (nd) | 1.54427 |
| Nf (Impurity absorption peak) | 0.01270 |
| Deliquescence | NaCl is a water-soluble crystal, it is easily deliquescent and can not be polished by CMP |
| Packing | Independent vacuum packaging for each piece |
| Product Name: | MgO-doped LiNbO3 wafer |
| Orientation: | Z-cut （+/-0.2°） |
| Diameter: | Dia 3″ (76.2mm) +/-0.3mm
Dia 4″ (100mm) +/-0.3mm |
| Orientation Flat: | 22mm (+/-2mm) 32mm (+/-2mm) |
| Thickness: | 500um (+/-20um)
1000um (+/-20um) |
| Polishing | Single side polished or Double sided polished |
| TTV: | < 6um |
| WARP: | <20um |
| Concentration: | 4.9~6 mol% |
| Edge chamfering: | Edge rounding |
| Structure | Si + SiO2 + Si |
| Standard Diameter | 4-inch(100mm), 6-inch(150mm), 8-inch(200mm) |
| Orientation | <100> |
| Type/Dopant | P-type/B-doped, N-type/P-doped |
| Handle wafer thickness | 400um, 675um, 725um |
| Resistivity | 1~20 ohm-cm, 1~100 ohm-cm, 0.001~0.005 ohm-cm or others |
| Buried Oxide layer (Box layer) |
500nm, 1um, 2um, 3um |
| Device layer | 70nm, 220nm, 340nm, 2um, 10um, 30um, 80um |
| Orientation | <100> |
| Type/Dopant | P-type/B-doped, N-type/P-doped, |
| Resistivity | 1~20 ohm-cm, 1~100 ohm-cm, 0.001~0.005 ohm-cm or others |
| Product Name | Thermal oxide Silicon wafer (SiO2/Si) Oxide layer on Silicon wafer Thermal oxidation of Silicon wafer |
| Oxide-layer(SiO2 layer) | 25nm, 50nm, 100nm, 300nm, 500nm, 1um or others |
| Oxidation surface | Single-sided oxidation, Double-sided oxidation |
| Oxidation process | Dry oxidation, Wet oxidation, |
| Conductivity type/Dopant | N-type/Phos-doped or N-type/As-doped or P-type/Boron-doped or Un-doped |
| Orientation | <100> or <111> |
| Diameter of Silicon wafer | 2″(50.8mm), 3″(76.2mm), 4″(100mm), 6″(150mm), 8″(200mm), 12″(250mm) |
| Thickness of Silicon wafer | 280um, 380um, 525um, 675um, 725um |
| Resistivity (Ohm-cm) | 0.001~0.005, 0.01~0.09, 0.1~0.9, 1~10, 20~30, >100, >1000, >10000 |
| Polishing | Single side polished or Double side polished |
| Surface Roughness | Ra<5A (0.5nm) or Ra<10A (1.0nm) |
| Product Name | Quartz single crystal substrate/wafer SiO2 single crystal substrate/wafer |
| Growth method | Hydrothermal method |
| Crystal structure | Hexagonal crystal system |
| Lattice Constant | A=4.914 – a c=5.405 – A |
| Melting point | 1610℃ (phase transition point: 573.1 ℃) |
| Density | 2.684 g/cm3 |
| Mohs Hardness | 7 |
| Heat Capacity | 0.18 cal/gm |
| Thermal conductivity | 0.0033 cal/cm ℃ |
| Thermoelectric constant | 1200 uv/℃ (300℃) |
| Refractive index | 1.544 |
| The coefficient of thermal expansion | α 11:13.71 * 106 ℃ / α 33:7.48 * 106 / ℃ |
| The value of Q | 1.8 x 106 Min |
| Sound velocity and table level | 3160 (m/sec) |
| Constant frequency | 1661 (kHz/mm) |
| Piezoelectric coupling | K2 (%) BAW: 0.65 SAW: 0.14 |
| Polished surface | Bending: 3″<20um, 4" <30um Primary orientation flat: 16mm(2-inch), 22mm(3-inch), 32mm(4-inch), |
| Substrate: | CaCO3 substrate |
| Growth method | |
| Crystal Structure : | Trigonal system |
| Lattice constant: | a= 4.989 c= 17.062 |
| Melting point: | 1339 ℃ |
| Density: | 2.71 g/cm3 |
| Thermal Conductivity | 4.646 W/m·K for 273 K |
| Thermal expansion coefficient | aa = 24.39 x10-6/K; ac = 5.68 x10-6/K
Non-uniaxial: no=na=nb , ne=nc |
| Refractive index | no = 1.6557, ne = 1.4852, Dh = -0.1705,
r = 6.20° at 0.63 um no = 1.6629, ne = 1.4885, Dh = -0.1744, r = 6.32° at 1.30 um |
| Semi-equation
(wavelength mm) |
no2= 2.69705 + 0.0192064/( λ 2 –0.01820) – 0.0151624 λ 2
ne2 = 2.18438 + 0.0087309/( λ 2 –0.01018) – 0.0024411 λ 2 |
| Beam deviation | < 3 arc min； |
| Transmitting wavefront distortion | < l/2 @ 632.8 nm； |
| Transmission range | 350nm – 2300nm |
| Orientation | <100>, <001> ±0.5º |
| Standard Size | 50x50x30mm, 1”x1”x1.0mm, 10x10x0.5mm, 5x5x0.5mm |
| Polishing | Fine ground, One side polished or Two side polished
Surface Roughness(Ra) < 5A |
| Application | CaCO3 crystal is mainly used in the defense industry and high-precision optical instruments, |
| Product Name: | GaN thin film on Sapphire wafer | ||
| Dopant and Conductivity: | N-type/Si-doped | N-type/Undoped | P-type/Mg-doped |
| Orientation: | C-plane, <0001> | ||
| Standard Size: | Diameter 2″(50.8mm), Diameter 4″(100mm) |
||
| Standard Thickness: | 430um, 650um | ||
| GaN thin film: | 4.5um, 20um | 4.5um, 20um | 4.5um, 20um |
| Resistivity（300K): | <0.05 ohm-cm, | <0.5 ohm-cm | <10 ohm-cm |
| Carrier Concentration: | > 1x10E18 /cm3 | < 5x10E17 /cm3 | > 6x10E16 /cm3 |
| Mobility: | ~ 200 cm2/V•s | ~ 300 cm2/V•s | ~ 10 cm2/V•s |
| Dislocation density: | <5x10E8 cm-2 | <5x10E8 /cm2 | <5x10E8 cm-2 |
| Substrate | GaN on Sapphire substrate | GaN on Sapphire substrate | GaN on Sapphire substrate |
| Uable area: | >90% | >90% | >90% |
Diameter: 2 Inch
C-Plane (0001) Miscut towards M-Axis 0.2°
Thickness: 425 / 500 micron
Surface Finish: Epi Polished, Ra < 0.5 nm
Double Side Polished (Optically Transparent)
Diameter: 2 Inch
C-Plane (0001) Miscut towards M-Axis 0.2°
Thickness: 425 micron
Surface Finish: Epi Polished, Ra < 0.5 nm
Single Side Polished
| Product Name | Orientation | Standard Size | Thickness | Polishing |
| Silicon substrate/wafer
(Un-doped or P-type or N-type) |
<100> ±0.5° <110> ±0.5° <111> ±0.5° <211> ±0.5° Or other off-angle |
10x10mm 10x5mm 5x5mm 20x20mm φ2″ x 0.28mm φ3″ x 0.38mm φ4″ x 0.5mm φ6″ x 0.625mm φ8″ x 0.725mm φ12″ x 0.775mm Or others |
0.1mm 0.2mm 0.28mm 0.38mm 0.5mm 0.525mm 0.625mm 1.0mm ±25μm |
Fine ground Single side polished Double side polished Roughness: Ra<10A(1.0nm) Roughness: Ra<5A(0.5nm |
| Product Name: | LiGaO2 single crystal substrate |
| Growth method | Czochralski method |
| Crystal Structure : | Orthogonal system |
| Lattice constant: | a=5.406 Å b=5.012 Å c=6.379 Å |
| Melting point: | 1600 ℃ |
| Density: | 4.18g/cm3 |
| Mohs hardness | 7.5 |
| Orientation | <100>, <001> |
| Standard Size | 10x10x0.5mm, 5x5x0.5mm |
| Polishing | Single side polished or Double side polished |
| Packing | class-100 clean bag, in class-1000 clean room |
| Application | LiGaO2 substrate and GaN film are well matched, and can obtain a good gallium nitride film |
| ITEM | Gallium Nitride on Silicon wafer, GaN on Silicon wafer |
| GaN thin film | 0.5μm ± 0.1 μm |
| GaN orientation | C-plane (0001) |
| Ga-face | <1nm, As-grown, EPI-ready |
| N-face | P-type/B-doped |
| Polarity | Ga-face |
| Conductivity type | Undoped/N-type |
| Macro defect density | <5/cm^2 |
| Silicon wafer substrate | |
| Orientation | <100> |
| Conductivity type | N-type/P-doped or P-type/B-doped |
| Dimension: | 10 x 10 x 0.5mm, Single side polished Dia. 2” x 0.5mm, Single side polished Dia. 4″ x 0.525mm, Single side polished |
| Resistivity | 1-5 ohm-cm, 0-10 ohm-cm, <0.005 ohm-cm |
| Product Name | Orientation | Standard Size | Thickness | Polishing |
| MgO substrate | <100> ± 0.5° <110> ± 0.5° <111> ± 0.5° Or other off-angle |
10x10mm 10x5mm 5x5mm 25x25mm 15x15mm φ1″ x 0.5mm φ2″ x 0.5mm Or others |
0.1mm 0.2mm 0.5mm 1.0mm 2.0mm Or others |
Fine ground Single side polished Double side polished Roughness: Ra<5A(0.5nm) |
| Product Name | Orientation | Standard Size | Thickness | Polishing |
| ZnO substrate (Un-doped) | <0001> ±0.5° <11-20> ±0.5° <10-10> ±0.5° Or other off-angle |
10x10mm 10x5mm 5x5mm 15x15mm 25 x 25mm Or others |
0.1mm 0.2mm 0.5mm 1.0mm 2.0mm Or others |
Fine ground Single side polished Double side polished Roughness: Ra<5A(0.5nm |
| Product Name | Orientation | Standard Size | Thickness | Polishing |
| LiF single crystal substrate | <100> ±0.5° <110> ±0.5° <111> ±0.5° Or other off-angle |
10x10mm 10x5mm 5x5mm 20x20mm φ25.4 x 0.5mm Or others |
0.5mm 1.0mm 2.0mm Or others |
Fine ground Single side polished Double side polished Roughness: Ra<10A(1.0nm) |
| Product Name: | CdTe single crystal substrate |
| Growth method | PVT |
| Crystal Structure : | Cubic, F43m |
| Lattice constant: | a = 6.483Å |
| Melting point: | 1047 ℃ |
| Density: | 5.851 g/cm3 |
| Heat capacity | 0.210 J /g.k |
| Thermal expansion coefficient | 5.0 x 10-6/K |
| Thermal Conductivity | 6.3 W /m.k at 300K |
| Transmission wavelength | 0.85 ~ 29.9 μm |
| Refractive index | 2.72 |
| Conductive Type | Un-doped/P-type |
| Orientation | <100>, <001>, <110>, <111> |
| Standard Size | 10x10x1.0mm, 5x5x1.0mm, 10x10x0.5mm, 5x5x0.5mm, |
| Polishing | Single side polished or Double side polished |
| Product Name: | CdS single crystal substrate |
| Growth method | PVT |
| Crystal Structure : | Hexagonal system |
| Lattice constant: | a=4.1367; c=6.7161 |
| Melting point: | 1287 ℃ |
| Density: | 4.821 g/cm3 |
| Heat capacity(J /g.k) | 0.3814 |
| Thermal expansion coefficient(10-6/K) | 4.6 // a 2.5 // c |
| Thermal Conductivity( W /m.k at 300K ) | 2.7 |
| Transparent wavelength( um) | 2.5 ~ 15 (>71%) |
