Heavily Doped P-Type Silicon wafer (2 Inch)

Grade prime
Mono-crystalline
Diameter: 2 Inch
Orientation: <100>
Type: P (Boron Doped)
Thickness: 280 Micron
Resistivity: 0.001-0.005 Ohm cm
Single Side Polished

IDE Interdigitated electrode on Silicon

Substrate: monocrystalline silicon
SiO2 Coating Thickness: 300 nm
Dimensions: 4 mm x 7 mm
Line width: 20 μm
Line Gap: 20 μm
Finger length:1.5 mm
Number of Fingers: 30 Pairs (60 Fingers)
Metal layer structure: Cr (30 nm)/Au (100 nm)
Temperature range for electrode use: -150° C  – 500° C

N-Type Si + SiO2 wafer–Silicon thermal oxide wafer

Grade Prime
Mono-crystalline
Diameter: 3 inch
Orientation: <100>
Type:N (Phosphorus Doped)
Thickness: 400 Micron
Resistivity: 1-10 Ohm cm
SiO2 layer Thickness: 300nm
Single Side Polished

N-Type Silicon wafer (2 Inch)

Grade Prime
Mono-crystalline
Diameter: 2 Inch
Orientation: <100>
Type: N (Phosphorus Doped)
Thickness: 280 Micron
Resistivity: 1-10 Ohm cm
Single Side Polished

N-Type Silicon wafer (3 Inch)

Grade Prime
Mono-crystalline
Diameter: 3 Inch
Orientation: <100>
Type: N (Phosphorus Doped)
Thickness: 380 Micron
Resistivity: 1-10 Ohm cm
Single Side Polished

N-Type Silicon wafer (3 Inch) Double side

Grade Prime
Mono-crystalline
Diameter: 3 Inch
Orientation: <100>
Type: N (Phosphorus Doped)
Thickness: 380 Micron
Resistivity: 1-10 Ohm cm
Double Side Polished

N-Type Silicon wafer (4 Inch)

Grade Prime
Mono-crystalline
Diameter: 4 Inch
Orientation: <100>
Type: N (Phosphorous Doped)
Thickness: 525 Micron
Resistivity: 1-10 Ohm cm
Single Side Polished

N-Type Silicon wafer (6 Inch)

Grade Prime
Mono-crystalline
Diameter: 6 Inch
Orientation: <100>
Type: N (Phosphorus Doped)
Thickness: 675 Micron
Resistivity: 1-10 Ohm cm
Single Side Polished

P-Type Si + SiO2 wafer–Silicon thermal oxide wafer (3 Inch)

Grade Prime
Mono-crystalline
Diameter: 3 inch
Orientation: <100>
Type: P (Boron Doped)
Thickness: 400 Micron
Resistivity: 1-10 Ohm cm
SiO2 layer Thickness: 300nm
Single Side Polished

P-Type Silicon wafer (2 Inch)

Grade Prime
Mono-crystalline
Diameter: 2 Inch
Orientation: <100>
Type: P (Boron Doped)
Thickness: 280 Micron
Resistivity: 1-10 Ohm cm
Single Side Polished

P-Type Silicon wafer (3 Inch)

Grade Prime
Mono-crystalline
Diameter: 3 Inch
Orientation: <100>
Type: P (Boron Doped)
Thickness: 380 Micron
Resistivity: 1-10 Ohm cm
Single Side Polished

P-Type Silicon wafer (3 Inch), Orientation 111

Grade Prime
Mono-crystalline
Diameter: 3 Inch
Orientation: <111>
Type: P (Boron Doped)
Thickness: 380 Micron
Resistivity: 1-10 Ohm cm
Single Side Polished

P-Type Silicon wafer (4 Inch)

Grade Prime
Mono-crystalline
Diameter: 4 Inch
Orientation: <100>
Type: P (Boron Doped)
Thickness: 525 Micron
Resistivity: 1-10 Ohm cm
Single Side Polished

P-Type Silicon wafer (6 Inch)

Grade Prime
Mono-crystalline
Diameter: 6 Inch
Orientation: <100>
Type: P (Boron Doped)
Thickness: 675 Micron
Resistivity: 1-10 Ohm cm
Single Side Polished